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SI2316BDS-T1-GE3-VB is a SOT23-3 packaged N-MOS tube Datasheet parameter video e
SI2316BDS-T1-GE3-VB is an N-Channel field effect transistor produced by VBsemi, with the following detailed parameters:

- Package: SOT23-3
- Rated voltage: 30V
- Rated current: 6.5A
- Drain-source resistance: 30mΩ @ VGS=10V, VGS=20V
- Threshold voltage: 1.2~2.2V

Application introduction:
SI2316BDS-T1-GE3-VB is suitable for various electronic devices and modules, especially in scenarios where current control is required. Due to its N-Channel design, it can be widely used in power switching, power management and other fields that require efficient energy consumption.

Main application areas:
1. **Power management module:** In power management modules, SI2316BDS-T1-GE3-VB can be used in circuits such as switching power supplies and voltage regulators to provide efficient power control.

2. **Current control module:** Due to its high rated current and low drain-source resistance, it is suitable for modules that require precise current control.

3. **Power tools and motor drives:** Used to control motors and power tools to ensure efficient energy transfer and current control.

Please note that this device should be used according to the specifications and recommendations in the data sheet and that the appropriate operating conditions should be selected according to the specific application scenario.

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