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GE3400-VB is a SOT23-3 packaged N-MOS tube. Datasheet parameter video explanatio
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**GE3400-VB Detailed parameter description:**
- Silk screen: VB1330
- Brand: VBsemi
- Package: SOT23-3
- Channel type: N-channel
- Rated voltage (VDS): 30V
- Maximum current (ID): 6.5A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): 1.2~2.2V

**GE3400-VB Application Introduction:**
GE3400-VB is an N-channel field effect transistor suitable for a variety of fields and modules, with the following main applications:

1. **Power management module:** Due to its high current and low on-resistance, it can be applied to power management modules such as regulators and switching power supplies.

2. **Current control:** In applications that require precise current control, such as motor drive and LED drive.

3. **Power switch:** Suitable for power switch design, providing efficient power switch solutions.

4. **Low voltage circuit breaker:** Due to its low on-resistance, it is suitable for low voltage circuit breaker applications that require fast circuit breaking.

5. **Automation system:** Suitable for various automation systems, such as sensor interface and actuator control.

In the above applications, the characteristics of GE3400-VB make it a high-performance and reliable choice. In actual applications, it is recommended to carefully evaluate whether its performance meets the requirements according to specific needs.

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