VBsemi 2329GN-VB is a P-Channel trench field effect transistor with the following parameters:

- Rated voltage (VDS): -30V
- Rated current (ID): -5.6A
- Static resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

Package is SOT23-3. The device is suitable for SOT23-3 package.

**Application Introduction:**
This transistor is suitable for various power management and switching circuit applications. Due to its P-Channel design, it can operate in a negative voltage environment, making it very useful in specific power supply designs.

**Field and module application:**
1. **Power management module:** 2329GN-VB can be used in power switching and regulation circuits to ensure efficient energy consumption and stable power output.
2. **Switching circuits:** Suitable for various switching circuits, such as switch mode power supplies (SMPS) and DC-DC converters.
3. **Current control modules:** In applications where precise control of current is required, such as motor drives and current limiters.
4. **Battery management systems:** Can be used for charge and discharge control to extend battery life.

Please note that specific applications and module selection depend on specific circuit design and performance requirements.