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AP2315GN-VB is a SOT23-3 packaged P-MOS tube Datasheet parameter video explanati
**VBsemi AP2315GN-VB detailed parameter description and application introduction:**

- **Model:** AP2315GN-VB
- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Package:** SOT23-3

**Parameters:**
- **Channel type:** P—Channel
- **Maximum drain voltage:** -30V
- **Maximum drain current:** -5.6A
- **On-resistance:** RDS(ON)=47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage:** Vth=-1V

**Application introduction:**
AP2315GN-VB is a P-Channel SOT23-3 packaged field effect transistor with excellent performance parameters, suitable for a variety of electronic application scenarios.

**Main application areas:**
1. **Power management system:** Due to its low on-resistance and high drain current capability, it can be used in power switching circuits in power management systems, such as DC-DC converters.
2. **Battery management:** In portable devices, it can be applied to battery management circuits to achieve effective power control and battery protection.
3. **Current control module:** Suitable for electronic modules that require efficient current control, such as motor drives and current regulators.

**Features and advantages:**
- Low on-resistance
- High drain current
- Suitable for low voltage, high current applications
- Compact package, easy to integrate

**Notes:**
In the application, please design the circuit reasonably according to the data sheet and the manufacturer's recommended usage conditions to ensure that the device operates within the specified operating range to ensure performance and reliability.

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