VBsemi VPHG3355-VB is a P-Channel trench field effect transistor with the following main parameters:

- **Voltage level (VDS): ** -30V
- **Current level (ID): ** -5.6A
- **On-resistance (RDS(ON)): ** 47mΩ (at VGS=10V, VGS=20V)
- **Threshold voltage (Vth): ** -1V

**Package: ** SOT23-3

**Application introduction: **
This device is suitable for various power management and switching applications, especially where P-Channel MOSFET is required. Due to its low on-resistance and high current carrying capacity, it is suitable for scenarios requiring efficient energy conversion.

**Main fields and modules: **
1. **Power management module: ** Used for switching power supplies, battery management systems, etc.
2. **Current Control Module:** Suitable for current control circuits that require P-Channel MOSFET.
3. **DC-DC Converter:** Used to build efficient DC-DC converters.
4. **Power Inverter:** Plays a key role in inverter circuits to help achieve DC to AC conversion.

This device can be widely used in electronic devices to provide efficient power management and switch control for a variety of applications.