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SSM2309GN-VB is a SOT23-3 packaged P-MOS tube Datasheet parameter video explanat
Model: SSM2309GN-VB

Silkscreen: VB2355

Brand: VBsemi

Parameters:
- Package type: SOT23-3
- Channel type: P-Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On-resistance: RDS(ON) = 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth = -1V

Application introduction:
SSM2309GN-VB is a P-Channel MOSFET in a SOT23-3 package with a -30V rated voltage and -5.6A rated current. Its low on-resistance (47mΩ @ VGS=10V, VGS=20V) and moderate threshold voltage (-1V) make it suitable for a variety of power management, power switching and amplification applications.

Detailed parameter description:
1. **Channel type:** P-Channel MOSFET, suitable for circuit design with load switching and power amplifier.
2. **Rated voltage:** -30V, suitable for applications with different power supply voltages.
3. **Rated current:** -5.6A, suitable for circuits with medium power requirements.
4. **On-resistance:** RDS(ON) = 47mΩ @ VGS=10V, VGS=20V, low on-resistance ensures high-efficiency power conversion.
5. **Threshold voltage:** Vth = -1V, providing reliable switching characteristics.

Applications:
SSM2309GN-VB is suitable for the following applications:
1. **Audio amplifier:** As the output stage driver of the power amplifier, it is used in audio amplification applications.
2. **Power management module:** Used to build compact and efficient power management modules.
3. **Power switching device:** As a power switching device, it can be used in power conversion and amplifier design.

The device can provide reliable performance in these areas, helping to optimize circuit design and improve system efficiency.

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