SMG2305A-VB is a P-Channel field effect transistor in SOT23-3 package of VBsemi brand. The following are detailed parameters and application introduction:
- Parameters: - Operating voltage (VDS): -30V - Continuous drain current (ID): -5.6A - On-state drain-source resistance (RDS(ON)): 47mΩ@VGS=10V, VGS=20V - Threshold voltage (Vth): -1V
- Package: SOT23-3
This transistor is suitable for the following fields and modules:
1. **Power management module:** Due to its P-Channel channel characteristics and moderate current capacity, it can be used in power switches and power management modules.
2. **Power Inverter:** Suitable for power inverter, especially in applications where P-Channel MOSFET is required.
3. **Battery Management System:** Due to low leakage current and moderate current capacity, it can be used in battery management system to control battery charging and discharging.
Please note that the specific application and module selection may vary according to the specific design requirements and environment. It is recommended to refer to the data sheet and specification book in the specific application.
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