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SSM2303N-VB is a SOT23-3 packaged P-MOS tube Datasheet parameter video explanati
Product model: SSM2303N-VB

Silk screen: VB2355

Brand: VBsemi

**Parameters:**
- Package: SOT23-3
- Type: P—Channel
- Rated voltage: -30V
- Rated current: -5.6A
- Static on-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Package:**
- Package type: SOT23-3

**Detailed parameter description and application introduction:**
SSM2303N-VB is a P—Channel field effect transistor in SOT23-3 package. Its main parameters include rated voltage of -30V, rated current of -5.6A, static on-resistance of 47mΩ (at VGS=10V, VGS=20V), and threshold voltage of -1V.

**Application fields:**
This product is suitable for a variety of electronic devices and modules that require P-Channel field effect transistors. Due to its superior performance under low voltage and low current conditions, it is particularly suitable for applications that require high efficiency and energy saving.

**Typical application modules:**
1. **Audio amplifier module:** Due to its P-Channel channel characteristics, it can be used in audio amplifier circuits to provide high-fidelity audio amplification functions.
2. **Power amplifier module:** Suitable for some power amplifier circuits, it can be used to provide power switching and amplify signals.
3. **Power management module:** Due to its low on-resistance and high rated current, it can be used in power switching circuits to improve the efficiency of power management.

Please note that the specific application and module selection should be based on the requirements and specifications of the circuit design. In integrated circuit design, ensure product specifications are met and device performance requirements are satisfied.

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