Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-60V |
20（±V） |
-1.7V |
-0.5A |
|
4000(mΩ) |
3000(mΩ) |
|
**Detailed parameter description:** - Brand: VBsemi - Product model: 2SK209-VB - Package: SOT23 - Polarity: P—Channel - Maximum drain voltage (VDS): -60V - Maximum drain current (ID): -0.5A - On-resistance (RDS(ON)): 3000mΩ @ VGS=10V, 4000(mΩ)@VGS=4.5V; ; VGS=±20V - Threshold voltage (Vth): -1.7V
Domain and module applications：
**Application fields and module examples:** 1. **Power management module:** Since 2SK209-VB has low on-resistance and moderate drain current, it can be used for power switch control in power management modules, which helps to improve efficiency and stability. 2. **Signal amplifier:** 2SK209-VB can be used as the off switch of the amplifier in the signal amplification circuit to help achieve precise signal control. 3. **Current control module:** Due to its P-Channel channel characteristics, this MOSFET is also suitable for current control modules, such as current sources. Please note that the specific application needs to be determined according to the circuit design requirements and parameter matching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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