Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P-Channel |
±60V |
|
1.8/-1.7V |
5.3/-4.9A |
|
29/60(mΩ) |
26/55(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P-Channel |
±60V |
|
1.8/-1.7V |
5.3/-4.9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P-Channel |
±60V |
|
1.8/-1.7V |
5.3/-4.9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P-Channel |
|
|
|
|
|
|
|
**VBsemi NCE4688-VB MOSFET** **Product Features:** - N+P-Channel trench MOSFET - Operating voltage: ±60V - Maximum continuous drain current: 5.3A (N-Channel), -4.9A (P-Channel) - Typical drain-source on-resistance: 26/55(mΩ) (N-Channel, VGS=10V, 29/60(mΩ)@VGS=4.5V), (P-Channel, VGS=10V, 29/60(mΩ)@VGS=4.5V) - Gate-source threshold voltage: ±1.9V - Package: SOP8
Domain and module applications:
VBsemi NCE4688-VB MOSFET is suitable for dual voltage range applications where N+P-Channel trench MOSFET is required. The following are some typical application scenarios: 1. **Power inverter module**: In the power inverter module, this MOSFET can be used for power inverter, power switch and power protection functions. Its dual-channel design can meet the inverter requirements in the positive and negative voltage range at the same time, improving the efficiency and stability of the inverter. 2. **Electric vehicle drive module**: In the electric vehicle drive system, VBsemi NCE4688-VB MOSFET can be used for tasks such as motor drive, braking energy recovery and battery management. Its high voltage tolerance and high current characteristics can meet the high requirements of electric vehicles for power devices. 3. **Industrial control module**: In industrial control systems that need to control positive and negative voltages at the same time, this MOSFET can be used to control switching, voltage regulation and current limiting functions. Its dual-channel structure and excellent performance can improve the accuracy and stability of industrial control systems. From the above examples, it can be seen that VBsemi NCE4688-VB MOSFET has broad application prospects in power inverter, electric vehicle drive and industrial control, and can provide strong support for performance improvement and function realization of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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