Detailed parameter description and application introduction: 1. Channel type: N-channel  - This indicates that this is an N-channel MOSFET, which is commonly used in electronic devices, especially applications that need to control positive voltage power supplies.  2. Rated voltage (VDS): 60V  - This is the maximum voltage that the trench MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to 60V.  3. Rated current (ID): 4A  - This is the rated current of the trench MOSFET, indicating the medium current load it can handle.  4. Static drain-source resistance (RDS(ON)):  - RDS(ON) is the resistance of the trench MOSFET in the on state. In the case of 10V, 86mΩ@VGS=4.5V; its resistance is 75mΩ, and in the case of 4.5V it is 96mΩ. This shows that in the on state, its resistance is relatively low, which helps to reduce power consumption and heat.  5. Gate-Source Voltage Rating (Vgs): ±20V (±V)  - This indicates that the gate-source voltage rating range is plus or minus ±20V. The gate-source voltage is used to control the on and off state of the MOSFET.  6. Threshold Voltage (Vth): 1.7V  - This is the threshold voltage range of the trench MOSFET, indicating the voltage that needs to be applied to the gate in order for the device to start conducting.  This type of N-channel MOSFET is suitable for areas that need to handle medium current loads to meet the needs of power switching and power management, especially medium power applications that need to handle positive voltage supplies. Due to its low drain-source resistance, it is suitable for medium power applications.