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UT3N06G-AE3-R-VB Product details

Product introduction:

Application Introduction: UT3N06G-AE3-R is an N-channel MOSFET suitable for applications such as power switching and motor drive.  Its medium power characteristics make it perform well in a variety of medium and low power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N-Channel 60V 1.7V 4A 86(mΩ) 75(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-N-Channel 60V 1.7V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-N-Channel 60V 1.7V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-N-Channel

UT3N06G-AE3-R (VB1695) parameter description: N channel, 60V, 4A, on-resistance 75mΩ@10V, 86mΩ@VGS=4.5V;, 96mΩ@4.5V, gate-source voltage range ±20V(±V), threshold voltage 1.7V, package: SOT23-3.

Domain and module applications:

Applicable fields and modules: Applicable to modules in the fields of power switches, motor drives and LED drives, especially suitable for scenarios with medium power requirements.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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