Application Introduction: UT3N06G-AE3-R is an N-channel MOSFET suitable for applications such as power switching and motor drive. Its medium power characteristics make it perform well in a variety of medium and low power applications.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 20（±V） | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
UT3N06G-AE3-R (VB1695) parameter description: N channel, 60V, 4A, on-resistance 75mΩ@10V, 86mΩ@VGS=4.5V;, 96mΩ@4.5V, gate-source voltage range ±20V(±V), threshold voltage 1.7V, package: SOT23-3.
Applicable fields and modules: Applicable to modules in the fields of power switches, motor drives and LED drives, especially suitable for scenarios with medium power requirements.
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