This product is suitable for power amplification and power management modules in electronic devices and modules and communication equipment that require N-Channel trench MOSFET.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 20（±V） | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
**Product model:** 7N6-YM-VB **Silk screen:** VB1695 **Brand:** VBsemi **Parameters:** - Package: SOT23-3 - Channel type: N-Channel - Rated voltage: 60V - Rated current: 4A - On-state resistance (RDS(ON)): 75mΩ (at VGS=10V, 86mΩ@VGS=4.5V; and; -VGS=±20V) - Threshold voltage (Vth): 1.7V
**Applicable fields and modules:** This product is suitable for electronic devices and modules that require N-Channel trench MOSFETs, especially in the following fields: 1. **Power modules:** Due to its high rated voltage and current, this MOSFET is suitable for power modules and can be used for power switching and regulation. 2. **Driver modules:** In applications that require driving motors or other peripherals, this MOSFET can be used as part of current switching and control. 3. **Communication equipment:** Suitable for power amplification and power management modules in communication equipment. 4. **Industrial control field:** Can be used in industrial automation and control systems, such as PLC, sensor interface, etc. 5. **Automotive electronics:** In automotive electronic systems, such as engine control unit (ECU), lighting control, etc. **Note:** When using this product, please refer to the product manual and specification sheet to ensure correct application and operation.
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