Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N-Channel |
40V |
|
1.8V |
10A |
|
16(mΩ) |
14(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N-Channel |
40V |
|
1.8V |
10A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N-Channel |
40V |
|
1.8V |
10A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N-Channel |
|
|
|
|
|
|
|
**VBsemi SM4029NSK-VB MOSFET:** - **Silkscreen:** VBA1410 - **Channel type:** N-Channel - **Rated voltage:** 40V - **Rated current:** 10A - **Static resistance:** RDS(ON) = 14mΩ @ VGS=10V, 16mΩ@VGS=4.5V; VGS=±20V； - **Threshold voltage:** Vth = 1.8V - **Package:** SOP8
Domain and module applications：
This MOSFET is suitable for multiple fields and modules: 1. **LED lighting driver:** Provides efficient power switching in LED lighting circuits. 2. **Power inverter:** Suitable for inverter design requiring high efficiency and high performance. 3. **Battery management system:** Used for battery charge and discharge control to ensure high efficiency and reliability. VBsemi SM4029NSK-VB MOSFET can be widely used in electronic devices and systems that require high-performance N-channel MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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