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P0804BVG-VB Product details

Product introduction:

The P0804BVG-VB MOSFET is an N-channel field effect transistor suitable for 40V operating voltage and 10A maximum current. Its static resistance is 14mΩ at VGS = 10V, 16mΩ @ VGS = 4.5V and VGS is ±20V, ensuring efficient current transfer. The threshold voltage is 1.8V, suitable for a variety of power supply and switch control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N-Channel 40V 1.8V 10A 16(mΩ) 14(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N-Channel 40V 1.8V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N-Channel 40V 1.8V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N-Channel
**VBsemi P0804BVG-VB MOSFET:** - **Silkscreen:** VBA1410 - **Channel type:** N-Channel - **Rated voltage:** 40V - **Rated current:** 10A - **Static resistance:** RDS(ON) = 14mΩ @ VGS=10V, 16mΩ@VGS=4.5V; VGS=±20V; - **Threshold voltage:** Vth = 1.8V - **Package:** SOP8

Domain and module applications:

This MOSFET is suitable for multiple fields and modules: 1. **Electric Vehicle Power System:** In the power switching circuit of electric vehicles, it provides high performance and reliability. 2. **Solar Inverter:** Suitable for solar inverters to ensure high-efficiency energy conversion. 3. **Power Management Module:** Used in various power management applications that require high-performance N-channel MOSFETs. VBsemi P0804BVG-VB MOSFET can be widely used in electronic devices and systems that require high-performance N-channel MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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