The characteristics of TM2301N/FN-VB make it excel in fields requiring current control and power consumption optimization, and is suitable for a variety of circuit designs, especially applications requiring P-Channel field effect transistors.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | 12（±V） | -0.8V | -4A | 80（mΩ） | 65(mΩ) | 60(mΩ) |
**Parameter Description:** - Package type: SOT23-3 - Channel type: P-Channel - Rated voltage (VDS): -20V - Rated current (ID): -4A - Switch resistance (RDS(ON)): 80 (mΩ) @ VGS = 2.5V, 65 (mΩ) @ VGS = 4.5V, 60 (mΩ) @ VGS = 10V; VGS = 12V - Threshold voltage (Vth): -0.81V
**Application fields and module examples:** - **Fields:** Electronic equipment, power management, analog circuits, etc. - **Module application examples:** 1. **Power switch module:** Modules suitable for designing load switching power supplies, which can effectively control current. 2. **Signal amplifier:** In analog circuits, it can be used in P-Channel amplifier modules for signal amplification and processing. 3. **Power inverter:** It can be used in power inverter modules, especially in application scenarios that require load control. The characteristics of TM2301N/FN-VB make it perform well in fields that require current control and power consumption optimization, and it is suitable for a variety of circuit designs, especially applications that require P-Channel trench field effect transistors.
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