Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
**Detailed parameter description:** - **Model:** STS2309A-VB - **Silkscreen:** VB2290 - **Brand:** VBsemi - **Package:** SOT23-3 - **Channel type:** P—Channel - **Maximum drain-source voltage:** -20V - **Maximum drain current:** -4A - **Drain resistance:** RDS(ON) = 80（mΩ）@VGS=2.5V、65(mΩ)@VGS=4.5V、60(mΩ)@VGS=10V； VGS=12V - **Threshold voltage:** Vth = -0.81V
Domain and module applications：
**Application Examples:** 1. **Power Management Module:** Due to its P-Channel nature and low drain resistance, the STS2309A-VB can be used in power switching and regulation circuits to improve the efficiency of power modules. 2. **Motor Drive Module:** In areas where efficient energy conversion and motor control are required, the STS2309A-VB can be used as a key component in motor drive modules. 3. **Battery Protection:** Suitable for battery protection circuits to ensure the safety and stability of batteries during charging and discharging. Overall, the STS2309A-VB plays a key role in circuit designs that require P-Channel field effect transistors, especially in power management, motor drive, and battery protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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