**Detailed parameter description:** - **Channel type:** P-Channel indicates that this is a P-channel field effect transistor, suitable for applications with small load current. - **Maximum drain current:** The maximum drain current of -20V indicates that the transistor can still operate normally when the reverse voltage is 20V. - **Maximum drain current:** The maximum drain current of -4A indicates that this transistor can handle a large current load. - **On resistance (RDS(ON)):** RDS(ON) is 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; It indicates the on resistance between the drain and the source under the given gate-source voltage conditions. - **Threshold voltage (Vth):** The threshold voltage of -0.81V indicates that below this voltage, the transistor will start to conduct. **Application Introduction:** SMP2301-VB This P-Channel trench MOSFET is suitable for various power management and switching applications, and can be used in the power management module of portable electronic devices, such as smart phones, tablet computers, etc. Due to its small SOT23-3 package and good electrical performance, it provides efficient power switching and management functions in a limited space, helping to extend battery life and improve the overall performance of the device.