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SI2333CDS-T1-GE3-VB Product details

Product introduction:

Application Introduction: SI2333CDS-T1-GE3 is a P-channel MOSFET suitable for low voltage and high current. Its low on-resistance and small package are suitable for high-performance and miniaturized circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P-Channel -20V -0.8V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P-Channel -20V -0.8V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P-Channel
SI2333CDS-T1-GE3 parameters: P channel, -20V, -4A, RDS(ON) 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @4.5V, 83mΩ@2.5V, 12Vgs(±V), -0.81Vth(V), SOT23-3

Domain and module applications:

Commonly used in battery-powered devices, small electronic devices, etc. Advantages: Low on-resistance: helps high-efficiency current switch control. Suitable for low voltage: suitable for low voltage operation, such as battery-powered devices. Applicable modules: SI2333CDS-T1-GE3 is suitable for modules that require low voltage and high current switch control, such as small battery-powered devices, mobile devices, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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