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Si2329DS-T1-GE3-VB Product details

Product introduction:

**Application Introduction:** VBsemi's Si2329DS-T1-GE3-VB is a P-channel field effect transistor in a SOT23-3 package, suitable for low-power, negative voltage electronic applications. This device is widely used in power management, signal switching, and some negative voltage circuits. Si2329DS-T1-GE3-VB is a P-channel field effect transistor suitable for low-power, negative voltage electronic applications, and is widely used in power management modules, signal switching modules, and some negative voltage circuits. When using, please follow the relevant precautions to ensure the reliability and performance of the device in various application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
**Parameter Description:** - **Model:** Si2329DS-T1-GE3-VB - **Silkscreen:** VB2290 - **Brand:** VBsemi - **Package:** SOT23-3 - **Channel Type:** P—Channel - **Operating Voltage:** -20V - **Maximum Current:** -4A - **On-resistance:** RDS(ON)=65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V;@VGS=4.5V, VGS=12V - **Threshold Voltage:** Vth=-0.81V

Domain and module applications:

**Main application areas and modules:** 1. **Power management module:** Si2329DS-T1-GE3-VB can be used in power management modules as a power switch or power adjustment device to provide low-power power management, especially suitable for negative voltage power supplies. 2. **Signal switch module:** Signal switch module suitable for negative voltage conditions, which can be used to achieve signal switching and control under negative voltage conditions. 3. **Negative voltage circuit:** Since the device is a P-channel, it is suitable for some negative voltage circuits, such as applications in negative voltage logic circuits. **Function:** - **Current control:** Si2329DS-T1-GE3-VB can be used as a key component for current control, and the current in the circuit can be controlled by adjusting its on-resistance. - **Signal switching:** Applicable to signal switch modules to achieve signal switching and control under negative voltage conditions. **Precautions for use:** 1. **Power supply polarity:** Because it is a P-channel field effect transistor, please note that the power supply polarity applicable to the device is negative voltage. 2. **Heat dissipation design:** In high-power applications, it is necessary to reasonably design the heat dissipation system to ensure that the device operates within the appropriate temperature range to maintain its performance and life. 3. **Voltage and current limit:** Pay attention to the maximum operating voltage and current of the device, and do not exceed the specified parameter range to prevent damage to the device. 4. **Anti-static measures:** During transportation and use, please take anti-static measures to avoid the influence of static electricity on the device. 5. **Reference data sheet:** When designing a circuit, please read the device data sheet carefully to ensure that it is designed and used in accordance with the recommendations provided by the manufacturer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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