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SI2305DS-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Application Introduction: SI2305DS-T1-GE3-VB is a P-Channel trench MOSFET suitable for various circuit and module designs, especially in low power and high performance applications requiring P-Channel MOSFET.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | 80（mΩ） | 65(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
Parameters: - Package type: SOT23-3 - Channel type: P-Channel - Maximum drain voltage (Vds): -20V - Maximum drain current (Id): -4A - Static drain-source resistance (RDS(ON)): 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage (Vth): -0.81V Package: SOT23-3
Domain and module applications：
Field Module Application: 1. **Power Management Module:** Due to its P-Channel MOSFET characteristics, SI2305DS-T1-GE3-VB is often used in power management modules, such as switching power supplies, battery management systems, etc., to achieve efficient power conversion and energy management. 2. **Current Control Module:** Suitable for modules that require precise control of current, such as current sources, current amplifiers, etc. 3. **Low Power Devices:** Due to its low threshold voltage and low leakage current characteristics, it is suitable for devices with high power consumption requirements, such as portable electronic devices, sensor nodes, etc. 4. **Signal Switch:** Used to design switching circuits to achieve efficient switching and transmission of signals. Please note that the above are some typical application scenarios, and actual use needs to be selected and designed according to specific circuit and system requirements. When integrating SI2305DS-T1-GE3-VB, it is recommended to read its data sheet carefully to obtain detailed electrical characteristics and operation information.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
