Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
**Detailed parameter description:** - Product model: SI2305BDS-T1-GE3-VB - Brand: VBsemi - Silk screen: VB2290 - Package: SOT23-3 - Channel type: P—Channel - Maximum withstand voltage: -20V - Maximum current: -4A - RDS(ON): 80（mΩ）@VGS=2.5V、65(mΩ)@VGS=4.5V、60(mΩ)@VGS=10V； VGS=12V - Threshold voltage(Vth): -0.81V
Domain and module applications：
1. **Power Management Module:** Due to its P-Channel characteristics, it can be used in power management modules to provide high-efficiency power switch control. 2. **Signal Amplifier:** In amplifier circuits that require a P-Channel, SI2305BDS-T1-GE3-VB can provide stable performance and is suitable for signal amplification applications. 3. **Current Control Module:** Suitable for current control modules, ensuring current stability due to its low impedance and load adjustment capabilities. 4. **Battery Management System:** In battery management systems that require high controllability and low power consumption, SI2305BDS-T1-GE3-VB can play an advantage. Make sure to carefully review the product manual and specifications before use to ensure correct application and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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