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SI2305ADS-T1-GE3-VB Product details

Product introduction:

Application Introduction: SI2305ADS-T1-GE3 is a medium power P-channel MOSFET suitable for applications such as power switching, inverters and power management. It can handle moderate power requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P-Channel -20V -0.8V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P-Channel -20V -0.8V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P-Channel
SI2305ADS-T1-GE3 (VB2290) parameter description: P channel, -20V, -4A, on-resistance 65 (mΩ), 80 (mΩ) @VGS=2.5V, 60 (mΩ) @VGS=10V; @4.5V, 83mΩ @2.5V, gate-source voltage range 12V (±V), threshold voltage -0.81V, package: SOT23-3.

Domain and module applications:

Advantages and applicable areas: It has moderate power carrying capacity and is suitable for medium-power application scenarios, such as power switches, inverters, motor drives and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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