Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
Parameter description: - Polarity: P-channel - Rated voltage: -20V - Maximum continuous drain current: -4A - Static drain-source resistance (RDS(ON)): 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; - Gate-source voltage (Vgs): 12V (±V) - Turn-on voltage (gate threshold voltage): -0.81V - Package: SOT23-3
Domain and module applications:
Applications: 1. **Power Module**: Since NTR2101PT1G-VB is suitable for low voltage applications and has moderate current handling capability, it can be used in power management modules, battery protection, and low voltage power management. 2. **Signal Switch**: This MOSFET device can be used in various low voltage signal switching applications, such as low voltage signal switching and circuit protection. 3. **Portable Device**: NTR2101PT1G-VB can be used for power management, signal switching, and battery management of portable devices, such as smartphones, tablet computers, and portable electronic devices. 4. **Low Voltage Power Supply**: In low voltage applications, this MOSFET is suitable for low voltage power management, DC-DC converters, and low voltage circuits. In short, NTR2101PT1G-VB is a versatile electronic device suitable for various electronic applications that require low voltage, moderate current handling capability, low resistance, and reliability. It can be used in modules such as power management, signal switching, portable devices, and low voltage power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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