Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
Parameter description: - Channel type: P-channel - Rated voltage: -20V - Maximum current: -4A - Static drain-source resistance (RDS(ON)): 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @4.5V, 83mΩ@2.5V - Gate-source voltage (±Vgs): 12V - Gate-source threshold voltage (Vth): -0.81V - Package type: SOT23-3
Domain and module applications:
1. Power module: NDS336P-NL-VB can be used in power switch modules to provide power switching functions and voltage regulation, suitable for various electronic devices and power systems. 2. Current control: In the current control module, it can be used for current switching and control, suitable for motor control, power management and current protection. 3. Amplification and signal switching: In the amplification and signal switching module, NDS336P-NL-VB can be used for signal amplification and switching functions, suitable for applications such as audio amplifiers, communication interfaces and sensor interfaces. 4. Inverter: It can also be used in inverter circuits to convert DC power to AC power, suitable for solar inverters, electric vehicle inverters and UPS systems. In short, NDS336P-NL-VB is a versatile P-channel MOSFET suitable for electronic modules in multiple fields, providing power management, current control, signal amplification and inverter functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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