Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
Parameters: - P-channel - Rated voltage: -20V - Maximum current: -4A - On-resistance (RDS(ON)): 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @ 4.5V, 83mΩ @ 2.5V, 12Vgs (±V) - Threshold voltage (Vth): -0.81V - Package: SOT23-3
Domain and module applications：
Main features and application areas: 1. **Power switch**: ME2323D-VB can be used for power switching applications, especially for low voltage power supplies such as battery-powered devices. 2. **Battery protection**: In battery management systems, this MOSFET can be used for battery charge and discharge control and protection to ensure the safe operation of the battery pack. 3. **Signal amplification**: Due to its low threshold voltage and low on-resistance, ME2323D-VB is suitable for signal amplification and switching applications such as amplifier circuits and signal switching. 4. **Low voltage applications**: The low voltage and low on-resistance characteristics of this MOSFET make it suitable for low voltage circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
