Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
**Detailed parameter description:** - Package type: SOT23-3 - Channel type: P-Channel - Maximum operating voltage: -20V - Maximum continuous drain current: -4A - Drain-source resistance (RDS(ON)): 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage (Vth): -0.81V
Domain and module applications:
1. **Low-power electronic devices:** Due to its low drain current and low power consumption, KDV-VB is suitable for portable electronic devices that focus on energy efficiency and battery life, such as smart watches, portable audio devices, etc. 2. **Power management module:** As a P-Channel MOSFET, KDV-VB can be used for power switching and current control in power management modules to ensure efficient power conversion and stable power output. 3. **Signal amplifier and modulator:** Due to its SOT23-3 package type, it is suitable for applications that require signal amplification or modulation in a limited space, such as RF modules in communication equipment. 4. **Wearable devices:** In wearable devices that require small and lightweight, KDV-VB can be used to control current, switch power, and other power optimization applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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