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FDN342P-NL-VB Product details

Product introduction:

**Application Brief:** VBsemi FDN342P-NL-VB is a P-channel field effect transistor suitable for SOT23-3 package. Its main features include low drain resistance, suitability for low voltage applications and efficient current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
**Product specifications:** - Silk screen: VB2290 - Brand: VBsemi - Package: SOT23-3 - Channel type: P-Channel - Maximum drain voltage: -20V - Maximum drain current: -4A - On-resistance: RDS(ON) = 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage: Vth = -0.81V

Domain and module applications:

**Application fields and module examples:** 1. **Low-power electronic devices:** Due to its low drain resistance and adaptability to low-voltage applications, the FDN342P-NL-VB is well suited for low-power electronic devices such as portable electronics and wireless sensor nodes. 2. **Power modules:** Due to its ability to effectively control current and low drain resistance, the FDN342P-NL-VB can be used in power modules for switching and regulating circuits to improve power efficiency. 3. **Current control modules:** As a P-channel transistor, the FDN342P-NL-VB plays an important role in current control modules and can be used to achieve precise current control, such as LED drive circuits. 4. **Low-voltage switching power supplies:** Suitable for applications that require switching under low voltage conditions, such as low-voltage switching power supplies in portable devices. Overall, the VBsemi FDN342P-NL-VB transistor is suitable for a variety of low-power, low-voltage and current-controlled electronic applications, providing an efficient solution for circuit design in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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