Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
Parameter description: - Polarity: P-channel - Rated voltage: -20V - Maximum continuous drain current: -4A - Static drain-source resistance (RDS(ON)): 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; - Gate-source voltage (Vgs): 12V (±V) - Turn-on voltage (gate threshold voltage): -0.81V - Package: SOT23-3
Domain and module applications：
Applications: 1. **Portable devices**: FDN336P-NL-VB is commonly used in portable devices such as smartphones, tablet computers and portable audio devices for power management, battery protection and signal switching. 2. **Battery management**: In portable devices and low-power sensors, this MOSFET device can be used for battery protection, battery balancing and low-power battery management. 3. **Signal switch**: FDN336P-NL-VB can be used for low-voltage and low-power signal switches and analog switches to control the switching and signal transmission of circuits. 4. **Embedded systems**: In embedded systems, sensor interfaces and small controllers, this MOSFET can also be used for low-power electronic applications. In short, FDN336P-NL-VB is a low-voltage and low-power P-channel MOSFET suitable for various low-voltage and low-power electronic applications that require low drain-source resistance and low power consumption. It can be used in modules such as portable devices, battery management, signal switches and embedded systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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