Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
Parameter description: - MOSFET type: P-channel - Rated voltage: -20V - Maximum current: -4A - On-resistance (RDS(ON)): 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @ 4.5V, 83mΩ @ 2.5V, 12Vgs - Threshold voltage (Vth): -0.81V - Package: SOT23-3
Domain and module applications:
1. **Low Power Switch Module**: - Due to its P-channel MOSFET characteristics, APM2301AC-VB is suitable for low power switch modules and can be used to control low voltage and low current switching operations. - Widely used in portable electronic devices, power management modules, small electronic switches. 2. **Signal Amplifier Module**: - This MOSFET can be used in signal amplification modules to amplify and control the transmission of small signals. - Used for signal processing in audio amplifiers, sensor interfaces, signal conditioning circuits. 3. **Current Control Module**: - The characteristics of APM2301AC-VB make it suitable for current control applications and can be used to adjust and limit current flow. - Used for precise current control in constant current sources, current regulation circuits, current control switches. 4. **Battery Protection Module**: - This MOSFET can be used in battery protection modules to control and protect the charging and discharging of batteries such as lithium batteries. - Used in portable electronic devices, battery assembly equipment, and power tools to protect batteries from overcharge and over-discharge.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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