Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
Parameters: - Type: P-channel - Maximum withstand voltage: -20V - Maximum current: -4A - Static on-resistance (RDS(ON)): 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @ 4.5V, 83mΩ @ 2.5V - Gate-source voltage (Vgs): 12V (±V) - Threshold voltage (Vth): -0.81V - Package type: SOT23-3
Domain and module applications：
1. Power Management: This MOSFET can be used in low-voltage dropout power switches to improve the efficiency of power management. It is suitable for portable devices, embedded systems, and low-power power modules. 2. DC-DC Converter: The AP2307GN-VB can be used in DC-DC converters to convert one low voltage to another, suitable for battery-driven portable devices, wireless communication modules, and sensor nodes. 3. Battery Management: In battery charging and discharging control circuits, this MOSFET can help achieve efficient battery management to ensure battery safety and performance. 4. Low-Power Electronics: Due to its low on-resistance and low voltage characteristics, it is suitable for electronic devices that require low-power operation, such as portable medical devices, sensors, and control circuits. 5. Power Switch: The AP2307GN-VB can be used in a variety of low-power power switch applications, including electronic terminals, portable audio equipment, and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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