Product introduction:
This type of P-channel MOSFET is suitable for a wide range of electronic devices and modules to meet the needs of power switching and power management, especially for applications that need to handle negative voltage supplies. Due to its low drain-source resistance, it is suitable for high-power applications.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
Parameters: P-channel, -20V, -4A, RDS(ON) 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @ 4.5V, 83mΩ @ 2.5V, 12Vgs (±V); -0.81Vth (V) Package: SOT23-3
Domain and module applications:
Application Introduction: This type of P-channel MOSFET is commonly used in various power management and switching applications, including but not limited to the following fields and modules: 1. Power switch: This MOSFET can be used in power switch modules such as DC-DC converters to achieve efficient power conversion. 2. Battery management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharge. 3. Power inverter: In solar inverters and UPS (uninterruptible power supply), P-channel MOSFET can be used to control the flow of power. 4. Power selection and switching: It can be used in power selectors and power switches to switch between different power sources.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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