Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
VBsemi's ACE2301BBM+H-VB is a P-Channel field effect transistor. The following is a regenerated detailed parameter description and application introduction: **Detailed parameter description:** - Package type: SOT23-3 - Channel type: P-Channel - Rated voltage: -20V - Rated current: -4A - On-resistance: 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage: -0.81V
Domain and module applications：
1. **Power Module:** Due to its low on-resistance and moderate current capability, ACE2301BBM+H-VB is suitable for use in power modules, especially load switches. 2. **Power Inverter:** In power inverters that require P-Channel MOSFETs for inversion, ACE2301BBM+H-VB can provide high efficiency and reliability. 3. **Current Control Module:** Due to its reliable threshold voltage and current characteristics, it can be used in current control modules such as current source circuits. 4. **Power Management System:** As a power switching element, it can be integrated into a power management system to provide effective power management and control. Please note that specific applications need to be adjusted according to design requirements and system specifications. Before use, please consult the product manual and specification to ensure correct use and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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