Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
VBsemi 2325GN-VB **Detailed parameter description:** - Type: P-Channel MOSFET - Maximum withstand voltage: -20V - Maximum current: -4A - RDS(ON): 80 (mΩ) @ VGS = 2.5V, 65 (mΩ) @ VGS = 4.5V, 60 (mΩ) @ VGS = 10V; VGS = 12V - Threshold voltage (Vth): -0.81V - Package: SOT23-3
Domain and module applications：
**Application fields:** 1. **Consumer electronics:** Handheld devices, chargers. 2. **Automotive electronics:** Vehicle power management, lighting control. 3. **Industrial control:** Motor control, switching power supply. 4. **Communication equipment:** Amplifier, RF power amplifier. **Note:** In the design, please ensure that the power consumption, temperature and current requirements of the circuit are met.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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