Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
2307GN-HF-VB is a P-Channel field effect transistor (FET) of VBsemi brand. The following are detailed parameter descriptions and application introductions: - Package: SOT23-3 - Polarity: P-Channel (positive channel) - Rated voltage (Vds): -20V - Rated current (Id): -4A - On-state resistance (RDS(ON)): 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage (Vth): -0.81V
Domain and module applications：
**Example:** 1. **Power switch module:** It can be used to design a power switch module to control the on/off state of the power supply and achieve effective power management. 2. **Battery protection module:** Due to its P-Channel polarity, it is suitable for battery protection circuits to protect the battery from overcurrent or overvoltage damage. 3. **LED driver:** Due to its performance parameters, it can be used in LED drive circuits to control the brightness and switching of LEDs. Please note that the specific application depends on the requirements of the circuit design, so when selecting and using the transistor, you need to carefully read its data sheet and reference circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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