Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
**Silkscreen:** VB2290 **Parameters:** - **Package:** SOT23-3 - **Channel type:** P—Channel - **Maximum drain-source voltage (VDS):** -20V - **Maximum drain current (ID):** -4A - **On-state resistance (RDS(ON)):** 80 (mΩ)@VGS=2.5V, 65 (mΩ)@VGS=4.5V, 60 (mΩ)@VGS=10V; VGS=12V - **Threshold voltage (Vth):** -0.81V
Domain and module applications：
1. **Power management module:** Due to its P-Channel nature and low on-resistance, it can be used in power management modules to provide efficient power switching and control. 2. **Current control module:** Suitable for current control circuits such as current sources and current control switches, and can provide reliable performance. 3. **Signal switch:** With low threshold voltage, it is suitable for signal switching circuits, providing reliable solutions for various signal processing applications. 4. **Portable devices:** The small SOT23-3 package design makes it particularly suitable for portable devices such as smartphones, tablet computers, etc., providing efficient power management for these devices. In summary, 2305GN-HF-VB is a versatile P-Channel MOSFET. Its performance and package design make it suitable for a variety of electronic fields, from power management to signal switching, and can provide reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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