Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
### 2. TSM2301BCX RF-VB Detailed parameter description - **Brand**: VBsemi - **Type**: P-Channel MOSFET - **Maximum voltage (VDS)**: -20V - **Maximum current (ID)**: -4A - **On-resistance (RDS(ON))**: - 80 mΩ @ VGS = 2.5V - 65 mΩ @ VGS = 4.5V - 60 mΩ @ VGS = 10V - **Maximum gate voltage (VGS)**: ±12V - **Threshold voltage (Vth)**: -0.81V - **Package**: SOT23-3
Domain and module applications：
### III. Applications and module examples TSM2301BCX RF-VB is suitable for various RF applications and modules. Here are some specific examples: 1. **RF front-end module**: - RF front-end amplifier and power amplifier for wireless communication equipment. 2. **Wireless sensor network**: - Wireless sensor nodes for environmental monitoring, smart home and industrial automation. 3. **RF power management**: - Power switching and power control in radio equipment and RF systems. 4. **RF amplifier**: - RF signal amplification and processing in broadcast, radar and satellite communication systems. 5. **RF switch**: - Switching and routing of RF signals in RF tuning and signal switching applications. The features of TSM2301BCX RF-VB make it an ideal choice for various RF devices and modules, ensuring stable operation of the equipment under high performance conditions and achieving low power consumption and efficient energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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