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Si2399DS-T1-VB Product details

Product introduction:

### Si2399DS-T1-VB Product Introduction Si2399DS-T1-VB is a P-Channel MOSFET provided by VBsemi, with a maximum drain-source voltage (Vds) of -20V and a maximum continuous drain current (Id) of -4A. The on-resistance (RDS(ON)) of this MOSFET shows excellent performance at different gate voltages (Vgs): 80 mΩ at Vgs=2.5V, 65 mΩ at Vgs=4.5V, and 60 mΩ at Vgs=10V. Its gate threshold voltage (Vth) is -0.81V, with a low turn-on voltage, and can be driven efficiently at lower voltages. The MOSFET is packaged in SOT23-3, which is suitable for compact circuit design requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
### Si2399DS-T1-VB Detailed parameter description - **Brand**: VBsemi - **Type**: P-Channel MOSFET - **Maximum drain-source voltage (Vds)**: -20V - **Maximum continuous drain current (Id)**: -4A - **On-resistance (RDS(ON))**: - @Vgs=2.5V: 80 mΩ - @Vgs=4.5V: 65 mΩ - @Vgs=10V: 60 mΩ - **Maximum gate-source voltage (Vgs)**: 12V - **Gate threshold voltage (Vth)**: -0.81V - **Package type**: SOT23-3

Domain and module applications:

### Applicable fields and modules Si2399DS-T1-VB P-Channel MOSFET has good performance and applicability, and is suitable for a variety of application scenarios. The following are several specific application fields and module examples: 1. **Power management module**: This MOSFET can be used in low-voltage DC-DC converters and power switches to provide efficient power management solutions. In portable devices such as smartphones and tablet computers, Si2399DS-T1-VB can achieve efficient power conversion and energy-saving management. 2. **Battery protection circuit**: In the lithium-ion battery protection circuit, this MOSFET can achieve fast response and precise control to protect the battery from overcharge and over-discharge damage, and improve the safety and service life of the battery. 3. **LED driver**: Due to its low on-resistance and low power consumption characteristics, Si2399DS-T1-VB can be used as a switching element in the LED driver circuit, providing stable current output and precise brightness adjustment functions, suitable for lighting and display applications. 4. **Motor controller**: In small motor controllers, this MOSFET can be used as an efficient motor switch to control the start, stop and direction of the motor, which is suitable for home appliances, robots and other fields. Si2399DS-T1-VB has high performance and versatility, which can meet the needs of different fields and modules, and provide reliable solutions for the design and manufacture of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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