Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
### Detailed parameter description - **Model**: FDN302P-VB - **Brand**: VBsemi - **Polarity**: P-Channel - **Maximum voltage (VDS)**: -20V - **Maximum current (ID)**: -4A - **On-resistance (RDS(ON))**: - 80mΩ @ VGS=2.5V - 65mΩ @ VGS=4.5V - 60mΩ @ VGS=10V - **Gate voltage (VGS)**: ±12V - **Threshold voltage (Vth)**: -0.81V - **Package**: SOT23-3
Domain and module applications:
### Applicable fields and modules FDN302P-VB MOSFET is widely used in the following fields and modules: 1. **Power management module**: This device can be used in DC-DC converters and power switches to improve the energy efficiency and stability of the system. 2. **Battery protection circuit**: Due to its low on-resistance and high current carrying capacity, it is very suitable for the protection circuit of lithium battery packs to ensure safe and reliable current management. 3. **Load switch**: In consumer electronics products such as notebook computers and tablet computers, this MOSFET is used to control the power switch of various peripheral devices to improve the endurance of the device. 4. **Portable devices**: Suitable for power distribution and management modules in portable devices such as smartphones and mobile power supplies, providing efficient power transmission. With its excellent electrical performance and compact package, FDN302P-VB is very suitable for various applications that require efficient and low-loss power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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