Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
parameter: -Channel type:Pchannel -Rated voltage: -30V-Maximum continuous current: -5.6A-Static on-resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V, 20Vgs (±V) -threshold voltage (Vth): -1V-Package: SOT23-3Detailed parameter description: ST2319SRG-VBis a PChannel metal oxide semiconductor field effect transistor (MOSFET) device, with -30VThe rated voltage and maximum continuous current are-5.6A. its RDS(ON)Performs well under different voltages, respectively 47mΩ@10Vand 56mΩ@4.5V. Furthermore, its threshold voltage (vth)for-1V.
Domain and module applications：
This model MOSFETModules suitable for various fields such as power inverters, power switches, battery protection circuits, mobile devices and charging management, and other applications requiring negative power switching.
Its low on-resistance and high current handling capabilities make it useful in high-efficiency, low-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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