Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
model: SSM3J328R-VBSilk screen: VB2355brand: VBsemiParameter Description: -polarity:Pchannel -Rated voltage: -30V-Maximum continuous drain current: -5.6A-static drain-Source resistance (RDS(ON)):47mΩ@10V, 56mΩ @ 4.5V -Gate-Source voltage (Vgs):20V(±V) -Turn-on voltage (gate threshold voltage): -1V-Package:SOT23-3
Domain and module applications：
Application areas: 1.
**Power module**:becauseSSM3J328R-VBHas low drain-Source resistor, which is suitable for power management modules, battery protection circuits and switching power supplies, helping to improve power conversion efficiency.
2.
**signal switch**: this kindMOSFETThe devices can be used in a variety of signal switching applications, such as low-voltage signal switching and circuit protection.
3.
**battery management**In portable devices and wireless communication devices,SSM3J328R-VBCan be used in battery management systems to ensure safe charging, discharging and protection of batteries.
4.
**Power management**: In power management circuits, thisMOSFETCan be used for power switching and power distribution.
In short,SSM3J328R-VBIt is a versatile electronic device suitable for a variety of electronic applications requiring moderate current carrying capacity, low resistance and reliability.
It can be used for power management, signal switches, battery management, power management and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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