Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
VBsemi SSM3J02T-VBProduct parameter description: -model: SSM3J02T-VB -Silk screen: VB2355 -brand: VBsemi-Package: SOT23-3 -Channel type: P—Channel -Rated channel voltage: -30V-Rated current: -5.6A-Static on-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth):-1V
Domain and module applications：
Its performance parameters make it ideal for: 1.
**Power management module: **Due to its low on-resistance and moderate current rating,SSM3J02T-VBCan be used in power switches and regulation modules to provide efficient power management.
2.
**Battery protection circuit: **In battery-powered systems, this device can be used to design battery protection circuits to ensure that the battery operates within the normal operating range.
3.
**Signal switch: **Suitable for various signal switching circuits to achieve precise control of signals.
4.
**Current control module: **Due to its low-resistance conduction characteristics, it can be used to design current control modules to ensure normal operation of the circuit.
Overall,SSM3J02T-VBIt is an excellent performanceP—Channel MOSFET, suitable for module design in multiple electronic fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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