Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
parameter : -Package type : SOT23-3 -Channel type :P-Channel-Rated voltage : -30V -Rated current : -5.6A -On-state resistance : RDS(ON) = 47mΩ @ VGS=10V, VGS=20V -threshold voltage : Vth = -1VDetailed parameter description: 1. **Channel type:**P-Channel MOSFETsuitable for circuit design with load switches and power amplifiers. 2. **Rated voltage:** -30V, suitable for applications with different power supply voltages. 3. **Rated current:** -5.6A, suitable for circuits with medium power requirements. 4. **On resistance:** RDS(ON) = 47mΩ @ VGS=10V, VGS=20V, low on-resistance ensures high-efficiency power conversion. 5. **Threshold voltage:** Vth = -1V, providing reliable switching characteristics.
Domain and module applications：
Application areas: SSM2309GN-VBApplicable to the following areas: 1.
**audio amplifier: **As an output stage driver for power amplifiers, used in audio amplification applications.
2.
**Power management module: **For building compact, efficient power management modules.
3.
**Power switching devices: **As a power switching device, it can be used in power conversion and amplifier designs.
The device provides reliable performance in these areas, helping to optimize circuit design and improve system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
