Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
Parameters: - Type: P-channel - Rated voltage (Vds): -30V - Maximum continuous current (Id): -5.6A - On-resistance (RDS(ON)): 47mΩ @ 10V - Gate-source voltage range (Vgs) : 20V (positive and negative) - Threshold voltage (Vth): -1V - Package: SOT23-3 Detailed parameter description:1. **type**: This is aPchannelMOSFET, meaning it conducts when a negative voltage is input. this typeMOSFETTypically used in circuits that require negative voltage operation. 2. **Rated voltage (vds)**: The maximum drain it can withstand-The source voltage is-30V. This means it can operate under negative voltage conditions. 3. **Maximum continuous current (ID)**:This oneMOSFETThe maximum current carrying capacity is-5.6A. The negative sign indicates that the current flows from source to drain. 4. **On-resistance (RDS(ON))**:RDS(ON)is the resistance in the on state, which affectsMOSFETpower consumption and efficiency. exist10VUnder the gate-source voltage, itsRDS(ON)for47mΩ, indicating that the power consumption in the on state is relatively low. 5. **Gate-source voltage range (Vgs)**:MOSFETThe gate-source voltage range is20V, which means that at most20Vvoltage to control its conduction state. 6. **threshold voltage (vth)**:This oneMOSFETThe threshold voltage is-1V. This is startupMOSFETTurn-on gate-source voltage. 7. **encapsulation**:This oneMOSFETuseSOT23-3package, a common small package type suitable for compact circuit designs.
Domain and module applications：
Application areas: SI2371EDS-T1-GE3-VBThis oneMOSFETSuitable for a variety of electronic modules and devices that require low on-resistance and negative voltage operation, including but not limited to modules in the following fields: 1.
**switch**: Can be used for low-resistance negative voltage power switches, such as voltage conversion and power control.
2.
**battery management**: Can be used for battery charge and discharge management to ensure safe and efficient battery usage.
3.
**load switch**: Used to control the on and off of the load, such asledLighting systems, power tools and electronic equipment.
4.
**Power protection**: Can be used in power supply protection circuits to prevent overcurrent, overvoltage and other abnormal conditions.
5.
**Current control**: Can be used in current control circuits such as battery chargers and current amplifiers.
In short, thisPchannelMOSFETIt is suitable for electronic modules and devices that require low on-resistance and negative voltage operation, providing power control and current management functions, especially in applications that require negative voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
