Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
model: SI2369DS-T1-GE3Silk screen: VB2355brand: VBsemiDetailed parameter description: -type:Pchannel MOSFET -Maximum withstand voltage: -30V-Maximum current: -5.6A-On resistance: 47mΩ@10V, 56mΩ@4.5V -Gate-source voltage: 20Vgs (±V) -Gate threshold voltage: -1Vth-Package: SOT23-3
Domain and module applications：
This device is suitable for module design in many fields, mainly including: 1.
Power management module: Suitable for power management modules responsible for power switch and load switch control.
2.
Power tools: Can be used for negative power control and load switches in power tools.
3.
Household appliance module: suitable for negative power supply control and load switch in the field of household appliances.
In short,SI2369DS-T1-GE3Suitable for module design in negative voltage control and load switching applications, mainly used in power management, power tools and household appliance modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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