Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
Parameter Description: -polarity:Pchannel -Rated voltage: -30V-Maximum continuous drain current: -5.6A-static drain-Source resistance (RDS(ON)):47mΩ@10V, 56mΩ @ 4.5V -Gate-Source voltage (Vgs):20V(±V) -Turn-on voltage (gate threshold voltage): -1V-Package:SOT23-3
Domain and module applications：
Application areas: 1.
**Power module**:Si2343CDS-T1-GE3-VBSuitable for low voltage power management modules, such as battery charge and discharge management, low voltageDC-DCconverters and power switches.
2.
**signal switch**: this kindMOSFETThe devices can be used in low voltage signal switching applications such as low voltage signal switching and circuit protection.
3.
**portable device**:Si2343CDS-T1-GE3-VBCan be used for power management, signal switching and battery management of portable devices, such as smartphones, tablets and portable electronic devices.
4.
**low voltage power supply**: In low voltage applications, thisMOSFETSuitable for low voltage power management,DC-DCconverters and low voltage circuits.
In short,Si2343CDS-T1-GE3-VBIt is a multifunctional electronic device suitable for various electronic applications requiring low voltage, moderate current capability, low resistance and reliability.
It can be used in power management, signal switches, portable devices, low-voltage power supplies and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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