Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
Detailed parameter description: -type:Pchannel MOSFET -Maximum withstand voltage: -30V-Maximum current: -5.6A-On resistance: 47mΩ @10V, 56mΩ @4.5V -Gate-source voltage: 20Vgs (±V) -Gate threshold voltage: -1Vth-Package:SOT23-3
Domain and module applications：
This device is suitable for module design in many fields, mainly including: 1.
Power management module: Suitable for power management modules responsible for power switch and load switch control.
2.
Converter Module: A converter module is available that is responsible for negative voltage conversion and inversion.
3.
Portable equipment: Suitable for load switching and power control in portable electronic equipment.
In short, SI2323DS-T1-GE3Module design suitable for negative voltage control and load switching applications, mainly in power management, converter modules and portable devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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