Product introduction：
Application Brief: SI2319CDS-T1-GE3 is a P-channel MOSFET suitable for power switching and voltage regulation applications. Its low on-resistance helps reduce power losses and improve efficiency.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
SI2319CDS-T1-GE3 (VB2355)Parameter Description:Pchannel,-30V,-5.6A, on-resistance47mΩ@10V,56mΩ@4.5V, gate-source voltage range20V(±V), threshold voltage-1V, package:SOT23-3.
Domain and module applications：
Advantages and applicable fields: It has low on-resistance and is suitable for fields requiring low power loss and high efficiency, such as power switches, voltage regulators, inverters and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
