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SI2307DS-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Model: SI2307DS-T1-GE3 Silk screen: VB2355 Brand: VBsemi This SI2307DS-T1-GE3 MOSFET is a low-voltage P-channel MOSFET, suitable for low-voltage applications. It has lower voltage and current ratings and is suitable for low power switching and power conversion applications. In short, SI2307DS-T1-GE3 MOSFET is suitable for various application scenarios that require low-voltage and low-power P-channel MOSFETs. It provides stable and reliable current control and low-power conversion functions, and is especially suitable for modules in low-voltage and low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
Parameter Description: - MOSFETtype:Pchannel -Rated voltage (VDS): -30V -Rated current (ID): -5.6A -Turn on resistance (RDS(ON)): 47mΩ@10V, 56mΩ@4.5V -threshold voltage (Vth): -1V -Package type: SOT23-3
Domain and module applications：
This oneMOSFETModules that can be widely used in the following areas: -Power management module: used for low-voltage switching power supply,DC-DCLow power power modules such as converters and inverters.
-Battery management module: used for low-voltage battery charge and discharge protection, battery management systems and other low-power battery applications.
-Low-power switch module: used for low-power applications such as low-voltage switching circuits and low-power switch control.
-Consumer electronics module: Power management and switching modules used in low-voltage, low-power consumer electronics products.
**effect: **On these modules,SI2307CDS-T1-GE3-VBPlay the following roles: 1.
**Low power conversion: **Suitable for low power applications and provide reliable power conversion.
2.
**Current control: **Through precise current control, it is suitable for applications requiring low-power current management.
3.
**Signal switch: **In the signal switch circuit, it is used to control the connection and disconnection of signals to achieve signal switching.
**Precautions for use: ** -It is necessary to ensure that the operating voltage and current do not exceed the specified maximum values.
-Consider appropriate heat dissipation measures in the design to ensure normal operating temperature of the device.
- P-Channel MOSFETThe current in the on state is negative and needs to be connected correctly according to the application.
The above introduction is for reference only, and specific applications need to be adjusted according to actual design and usage.
-Battery management module: used for low-voltage battery charge and discharge protection, battery management systems and other low-power battery applications.
-Low-power switch module: used for low-power applications such as low-voltage switching circuits and low-power switch control.
-Consumer electronics module: Power management and switching modules used in low-voltage, low-power consumer electronics products.
**effect: **On these modules,SI2307CDS-T1-GE3-VBPlay the following roles: 1.
**Low power conversion: **Suitable for low power applications and provide reliable power conversion.
2.
**Current control: **Through precise current control, it is suitable for applications requiring low-power current management.
3.
**Signal switch: **In the signal switch circuit, it is used to control the connection and disconnection of signals to achieve signal switching.
**Precautions for use: ** -It is necessary to ensure that the operating voltage and current do not exceed the specified maximum values.
-Consider appropriate heat dissipation measures in the design to ensure normal operating temperature of the device.
- P-Channel MOSFETThe current in the on state is negative and needs to be connected correctly according to the application.
The above introduction is for reference only, and specific applications need to be adjusted according to actual design and usage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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