Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Parameter Description: ** -Package type: SOT23-3 -Channel type: P—Channel -Maximum withstand voltage: -30V-Maximum current: -5.6A-Turn-on voltage (gate-source voltage): Vth=-1V -Turn on the resistor: RDS(ON)=47mΩ @ VGS=10V, VGS=20V
Domain and module applications：
**Domains and module applications:**-**Power management module: **due to itsP-Channeldesign and larger current capabilities, can be used in low-voltage power management modules.
- **Power amplifier: **Suitable for needsPtype field effect transistor power amplifier circuit.
- **DC-DCconverter: **for building high-efficiency, low-voltageDC-DCconverter.
- **Current control applications: **Due to its low turn-on resistance, it can be used in current control circuits.
This oneVBsemi NAS3401NRG-VBField effect transistors are suitable for a variety of power management and power control applications, especially those with high requirements for low voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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